| Nr. | Teilname | Beschreibung | Hersteller |
| 272401 | BU4066BC | Viererkabelentsprechung Schalter | ROHM |
| 272402 | BU4066BC/BCF/BCFV | Standard-Logik LSIs > CMOS Logik BU4000B Reihe | ROHM |
| 272403 | BU4066BCF | Viererkabelentsprechung Schalter | ROHM |
| 272404 | BU4066BCFV | Viererkabelentsprechung Schalter | ROHM |
| 272405 | BU4069UB | Hexagoninverter | ROHM |
| 272406 | BU4069UB/UBF/UBFV | Standard-Logik LSIs > CMOS Logik BU4000B Reihe | ROHM |
| 272407 | BU4069UBF | Hexagoninverter | ROHM |
| 272408 | BU4069UBFV | Hexagoninverter | ROHM |
| 272409 | BU406D | ENERGIE TRANSISTORS(7A, 150-200V, 60w) | MOSPEC Semiconductor |
| 272410 | BU406D | NPN ENERGIE TRANSISTOR | Boca Semiconductor Corporation |
| 272411 | BU406D | NPN EPITAXIAL- SPANNUNG SCHALTUNG GEBRAUCH DES SILIKON-TRANSISTOR(HIGH IM HORIZONTALEN ABLENKUNG OUTPUT-STADIUM) | Wing Shing Computer Components |
| 272412 | BU406D | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 272413 | BU406D | NPN, Horizontalablenkung Transistor. Für horizontale Ablenkung Ausgangsstufen-Fernseher und CRT. Vceo = 200 VDC, VCBO = 400Vdc, Vcev = 400Vdc VEB = 6Vdc, Ic = 7Adc, PD = 60W. | USHA India LTD |
| 272414 | BU406H | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 272415 | BU406H | 400 V, 7 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
| 272416 | BU406H | NPN epitaktischen Siliziumtransistor. Hochspannungsschalt für Horizontalablenkung Endstufe. Kollektor-Basisspannung 400V. Kollektor-Emitter-Spannung 200V. Emitter-Basis-Spannung 6V. | Wing Shing Computer Components |
| 272417 | BU406TU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 272418 | BU407 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 272419 | BU407 | HOHER SILIKON-TRANSISTOR DES STROM-NPN | ST Microelectronics |
| 272420 | BU407 | NPN SILIKON-ENERGIE TRANSISTOREN | Power Innovations |
| 272421 | BU407 | ENERGIE TRANSISTORS(7A, 150-200V, 60w) | MOSPEC Semiconductor |
| 272422 | BU407 | NPN ENERGIE TRANSISTOR | Boca Semiconductor Corporation |
| 272423 | BU407 | EPITAXIAL- PLANNAR TRANSISTOR(GENERAL BESCHREIBUNG DES SILIKON-) | Wing Shing Computer Components |
| 272424 | BU407 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 272425 | BU407 | Energie 7A 150V DEF NPN | ON Semiconductor |
| 272426 | BU407 | NPN EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 272427 | BU407 | 60.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 7.000A Ic, hFE. | Continental Device India Limited |
| 272428 | BU407 | NPN-Leistungstransistor | Motorola |
| 272429 | BU407 | HOCHSTROM NPN SILIKON-TRANSISTOR | SGS Thomson Microelectronics |
| 272430 | BU407 | 330 V, 7 A, 60 W, NPN Silizium-Leistungstransistor | Texas Instruments |
| 272431 | BU407 | NPN, Horizontalablenkung Transistor zur Horizontalablenkung Endstufen TV und SRT. Vceo = 150V DC betragen, VCBO = 330Vdc, Vcev = 330Vdc VEB = 6Vdc, Ic = 7Adc, PD = 60W. | USHA India LTD |
| 272432 | BU4070B | Viererkabelexklusives ODER -gatter | ROHM |
| 272433 | BU4070B/BF | Standard-Logik LSIs > CMOS Logik BU4000B Reihe | ROHM |
| 272434 | BU4070BF | Viererkabelexklusives ODER -gatter | ROHM |
| 272435 | BU407D | ENERGIE TRANSISTORS(7A, 150-200V, 60w) | MOSPEC Semiconductor |
| 272436 | BU407D | NPN ENERGIE TRANSISTOR | Boca Semiconductor Corporation |
| 272437 | BU407D | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 272438 | BU407H | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 272439 | BU407H | ENERGIE TRANSISTORS(7A, 150-200V, 60w) | MOSPEC Semiconductor |
| 272440 | BU407H | 330 V, 7 A, NPN Silizium-Epitaxie-Transistor | Samsung Electronic |
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