| Nr. | Teilname | Beschreibung | Hersteller |
| 47681 | 2N5550 | SILIKON-UNIVERSELLE HOCHSPANNUNGSTRANSISTOREN | Micro Electronics |
| 47682 | 2N5550 | Verstärker-Transistoren | Motorola |
| 47683 | 2N5550 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47684 | 2N5550 | Kleiner Signal-Verstärker NPN | ON Semiconductor |
| 47685 | 2N5550 | NPN EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 47686 | 2N5550 | NPN Silikon Expitaxial planarer Transistor für Hochspannungsverstärkeranwendungen des allgemeinen Zweckes | Semtech |
| 47687 | 2N5550 | 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE | Continental Device India Limited |
| 47688 | 2N5550 | Verstärkertransistoren. Kollektor-Emitter-Spannung: 140V = Vceo. Kollektor-Basis-Spannung: 160V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 47689 | 2N5550-D | Silikon Der Verstärker-Transistor-NPN | ON Semiconductor |
| 47690 | 2N5550BU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47691 | 2N5550RLRA | Kleiner Signal-Verstärker NPN | ON Semiconductor |
| 47692 | 2N5550RLRP | Kleiner Signal-Verstärker NPN | ON Semiconductor |
| 47693 | 2N5550S | Hochspannungstransistor | Korea Electronics (KEC) |
| 47694 | 2N5550TA | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47695 | 2N5550TAR | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47696 | 2N5550TF | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47697 | 2N5550TFR | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47698 | 2N5550_D26Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47699 | 2N5550_J24Z | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 47700 | 2N5551 | NPN Hochspannungstransistoren | Philips |
| 47701 | 2N5551 | NPN Zweck-Verstärker | National Semiconductor |
| 47702 | 2N5551 | NPN Zweck-Verstärker | Fairchild Semiconductor |
| 47703 | 2N5551 | Hochspannungstransistor | Korea Electronics (KEC) |
| 47704 | 2N5551 | NPN Silikon-Epitaxial- Planarer Transistor | Honey Technology |
| 47705 | 2N5551 | SILIKON-UNIVERSELLE HOCHSPANNUNGSTRANSISTOREN | Micro Electronics |
| 47706 | 2N5551 | NPN Silikon-Transistor (Hochspannungsanwendung des universellen Verstärkers) | AUK Corp |
| 47707 | 2N5551 | NPN EPITAXIAL- PLANARER SILIKON-HOCHSPANNUNG-TRANSISTOR | Boca Semiconductor Corporation |
| 47708 | 2N5551 | Verstärker-Transistoren | Motorola |
| 47709 | 2N5551 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47710 | 2N5551 | Kleiner Signal-Verstärker NPN | ON Semiconductor |
| 47711 | 2N5551 | NPN Silikon Expitaxial planarer Transistor für Hochspannungsverstärkeranwendungen des allgemeinen Zweckes | Semtech |
| 47712 | 2N5551 | 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE | Continental Device India Limited |
| 47713 | 2N5551 | Verstärkertransistoren. Kollektor-Emitter-Spannung: 160V = Vceo. Kollektor-Basis-Spannung: 180V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 47714 | 2N5551BU | NPN Zweck-Verstärker | Fairchild Semiconductor |
| 47715 | 2N5551C | Hochspannungstransistor | Korea Electronics (KEC) |
| 47716 | 2N5551CBU | NPN Zweck-Verstärker | Fairchild Semiconductor |
| 47717 | 2N5551CTA | NPN Zweck-Verstärker | Fairchild Semiconductor |
| 47718 | 2N5551HR | Hallo-Rel NPN-Bipolartransistors 160 V, 0,5 A | ST Microelectronics |
| 47719 | 2N5551HRG | Hallo-Rel NPN-Bipolartransistors 160 V, 0,5 A | ST Microelectronics |
| 47720 | 2N5551HRT | Hallo-Rel NPN-Bipolartransistors 160 V, 0,5 A | ST Microelectronics |
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