| Nr. | Teilname | Beschreibung | Hersteller |
| 48401 | 2N6126 | 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. | Continental Device India Limited |
| 48402 | 2N6126 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V. | General Electric Solid State |
| 48403 | 2N6129 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48404 | 2N6130 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48405 | 2N6131 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48406 | 2N6132 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48407 | 2N6133 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48408 | 2N6134 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48409 | 2N6137 | Militärisches Planares TO-18 Hermetisch | Unitrode |
| 48410 | 2N6137 | Militärisches Planares TO-18 Hermetisch | Unitrode |
| 48411 | 2N6145 | TRIODE THYRISTOREN DES SILIKON-BIDIRECTIOANAL | Motorola |
| 48412 | 2N6146 | TRIODE THYRISTOREN DES SILIKON-BIDIRECTIOANAL | Motorola |
| 48413 | 2N6147 | TRIODE THYRISTOREN DES SILIKON-BIDIRECTIOANAL | Motorola |
| 48414 | 2N6153 | Umkehrbarer Triode Thyristor (TRIAC) | Semitronics |
| 48415 | 2N6166 | NPN SILIKON-RF ENERGIE TRANSISTOR | Advanced Semiconductor |
| 48416 | 2N6171 | Silikon Kontrolliertes Rectifiers(Reverse, das Triode Thyristoren Blockiert) | Motorola |
| 48417 | 2N6172 | Silikon Kontrolliertes Rectifiers(Reverse, das Triode Thyristoren Blockiert) | Motorola |
| 48418 | 2N6173 | Silikon Kontrolliertes Rectifiers(Reverse, das Triode Thyristoren Blockiert) | Motorola |
| 48419 | 2N6174 | Silikon Kontrolliertes Rectifiers(Reverse, das Triode Thyristoren Blockiert) | Motorola |
| 48420 | 2N6188 | 100 V, 10 A Hochgeschwindigkeits-PNP-Transistor | Solid State Devices Inc |
| 48421 | 2N6189 | 100 V, 10 A Hochgeschwindigkeits-PNP-Transistor | Solid State Devices Inc |
| 48422 | 2N6190 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48423 | 2N6190 | Span-Art Polarität PNP Der 2C6193 Geometrie-9700 | Semicoa Semiconductor |
| 48424 | 2N6191 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48425 | 2N6191 | Span-Art Polarität PNP Der 2C6193 Geometrie-9700 | Semicoa Semiconductor |
| 48426 | 2N6192 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48427 | 2N6192 | Span-Art Polarität PNP Der 2C6193 Geometrie-9700 | Semicoa Semiconductor |
| 48428 | 2N6192 | 100 V, 5 A High Speed ??PNP-Transistor | Solid State Devices Inc |
| 48429 | 2N6193 | PNP Transistor | Microsemi |
| 48430 | 2N6193 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48431 | 2N6193 | Span-Art Polarität PNP Der 2C6193 Geometrie-9700 | Semicoa Semiconductor |
| 48432 | 2N6193 | 100 V, 5 A High Speed ??PNP-Transistor | Solid State Devices Inc |
| 48433 | 2N6198 | 12 W, 28 V, 100-200 MHz, UKW-Kommunikation | Acrian |
| 48434 | 2N6199 | NPN SILIKON-RF ENERGIE TRANSISTOR | Advanced Semiconductor |
| 48435 | 2N6199 | 25 W, 28 V, 100-200 MHz, UKW-Kommunikation | Acrian |
| 48436 | 2N6200 | B40-28 40 WATT - 28 VOLT 100-200 MHZ | Acrian |
| 48437 | 2N6200 | B40-28 40 WATT - 28 VOLT 100-200 MHZ | Acrian |
| 48438 | 2N6211 | PNP Transistor | Microsemi |
| 48439 | 2N6211 | ENERGIE TRANSISTORS(2A, 35W) | MOSPEC Semiconductor |
| 48440 | 2N6211 | MEDIUM-POWER HOCHSPANNUNGSPNP ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
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