Nr. | Teilname | Beschreibung | Hersteller |
49161 | 2N6677 | NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
49162 | 2N6677 | 15 A SwitchMax Leistungstransistor. Hochspannung NPN-Typ. | General Electric Solid State |
49163 | 2N6677 | NPN Silizium-Leistungstransistor. 15 A, 350 V, 175 W. | Motorola |
49164 | 2N6678 | NPN Transistor | Microsemi |
49165 | 2N6678 | ENERGIE TRANSISTORS(15A, 175w) | MOSPEC Semiconductor |
49166 | 2N6678 | NPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
49167 | 2N6678 | 15 A SwitchMax Leistungstransistor. Hochspannung NPN-Typ. | General Electric Solid State |
49168 | 2N6678 | NPN Silizium-Leistungstransistor. 15 A, 400 V, 175 W. | Motorola |
49169 | 2N6686 | Zweipolige NPN Vorrichtung | SemeLAB |
49170 | 2N6686 | 25 A SwitchMax Leistungstransistor. NPN-Typ. | General Electric Solid State |
49171 | 2N6687 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto3 | SemeLAB |
49172 | 2N6687 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto3 | SemeLAB |
49173 | 2N6687 | 25 A SwitchMax Leistungstransistor. NPN-Typ. | General Electric Solid State |
49174 | 2N6688 | 25 A SwitchMax Leistungstransistor. NPN-Typ. | General Electric Solid State |
49175 | 2N6689 | NPN Transistor | Microsemi |
49176 | 2N6690 | NPN ENERGIE SILIKON-TRANSISTOR | Microsemi |
49177 | 2N6691 | NPN Transistor | Microsemi |
49178 | 2N6693 | NPN Transistor | Microsemi |
49179 | 2N6702 | Hochstrom-Silikon-NPN VERSAWATT Transistor. | General Electric Solid State |
49180 | 2N6703 | Hochstrom-Silikon-NPN VERSAWATT Transistor. | General Electric Solid State |
49181 | 2N6704 | Hochstrom-Silikon-NPN VERSAWATT Transistor. | General Electric Solid State |
49182 | 2N6705 | 0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE | Continental Device India Limited |
49183 | 2N6707 | 0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE | Continental Device India Limited |
49184 | 2N6708 | 0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE | Continental Device India Limited |
49185 | 2N6709 | 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE | Continental Device India Limited |
49186 | 2N6710 | 0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE | Continental Device India Limited |
49187 | 2N6714 | NPN SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOREN | Zetex Semiconductors |
49188 | 2N6714 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Boca Semiconductor Corporation |
49189 | 2N6714 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
49190 | 2N6714 | 0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE | Continental Device India Limited |
49191 | 2N6714 | NPN SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOREN | Diodes |
49192 | 2N6715 | NPN SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOREN | Zetex Semiconductors |
49193 | 2N6715 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Boca Semiconductor Corporation |
49194 | 2N6715 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
49195 | 2N6715 | 0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE | Continental Device India Limited |
49196 | 2N6715 | NPN SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOREN | Diodes |
49197 | 2N6716 | NPN SILIKON-PLANARE MITTLERE ENERGIE TRANSISTOREN | Zetex Semiconductors |
49198 | 2N6716 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Boca Semiconductor Corporation |
49199 | 2N6716 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
49200 | 2N6716 | 0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE | Continental Device India Limited |
| | | |