Nr. | Nome da parte | Descrição | Fabricante |
249841 | BC308BU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249842 | BC308C | Amplificador Transistors(PNP) | Motorola |
249843 | BC308C | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249844 | BC308C | Silicone De Transistors(PNP Do Amplificador) | ON Semiconductor |
249845 | BC308CBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249846 | BC308TA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249847 | BC308TAR | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249848 | BC309 | Aplicações do switching e do amplificador | Fairchild Semiconductor |
249849 | BC309 | Transistor Da Finalidade Geral | Korea Electronics (KEC) |
249850 | BC309 | Mocy de Tranzystor ma.ej cz?otliwo.ci ma.ej | Ultra CEMI |
249851 | BC309 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
249852 | BC309 | Transistor. Aplicações de comutação e amplificador. Tensão coletor-base de Vcbo = -30V. Tensão coletor-emissor VCEO = -25V. Tensão emissor-base Vebo = 5V. Dissipação Collector Pc (max) = 500mW. Coletor de corrente Ic = -100mA. | USHA India LTD |
249853 | BC309A | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
249854 | BC309A | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
249855 | BC309A | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 120-220 hFE | Continental Device India Limited |
249856 | BC309ABU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249857 | BC309ATA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249858 | BC309B | Amplificador Transistors(PNP) | Motorola |
249859 | BC309B | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 200-460 hFE | Continental Device India Limited |
249860 | BC309BBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249861 | BC309BTA | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249862 | BC309C | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
249863 | BC309C | TRANSISTOR EPITAXIAL DO SILICONE DE PNP | Fairchild Semiconductor |
249864 | BC309C | 0.350W Uso Geral PNP plástico com chumbo Transistor. VCEO 25V, 0.100A Ic, 420-800 hFE | Continental Device India Limited |
249865 | BC309CBU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
249866 | BC313 | Mocy krzemowy do redniej de Tranzystor, ma.ej cz?otliwo.ci | Ultra CEMI |
249867 | BC313 | Mocy de Tranzystor ma.ej cz?otliwo.ci ma.ej | Ultra CEMI |
249868 | BC317 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
249869 | BC317 | 0.350W Uso Geral NPN plástico com chumbo Transistor. 45V VCEO, 0.150A Ic, 110-450 hFE | Continental Device India Limited |
249870 | BC317A | 0.350W Uso Geral NPN plástico com chumbo Transistor. 45V VCEO, 0.150A Ic, 110-220 hFE | Continental Device India Limited |
249871 | BC317B | 0.350W Uso Geral NPN plástico com chumbo Transistor. VCEO 45V, 0.150A Ic, 200-450 hFE | Continental Device India Limited |
249872 | BC318 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
249873 | BC319 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE NPN | Micro Electronics |
249874 | BC320 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
249875 | BC3200 | Retificadores Da Silicone-Ponte | Diotec Elektronische |
249876 | BC321 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
249877 | BC322 | TRANSISTOR EPITAXIAL PLANAR DO SILICONE DE PNP | Micro Electronics |
249878 | BC327 | Transistor da finalidade geral de PNP | Philips |
249879 | BC327 | Aplicações do switching e do amplificador | Fairchild Semiconductor |
249880 | BC327 | Transistor Da Finalidade Geral | Korea Electronics (KEC) |
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