| Nr. | Nom de partie | Description | Fabricant |
| 1184121 | T2300F | 2.5-A triac sensible au silicium-porte. Porte Max 3 mA, Vdrom 50 V. | General Electric Solid State |
| 1184122 | T2300M | 2.5-A triac sensible au silicium-porte. Porte Max 3 mA, Vdrom 600 V. | General Electric Solid State |
| 1184123 | T2300N | 2.5-A triac sensible au silicium-porte. Porte Max 3 mA, Vdrom 800 V. | General Electric Solid State |
| 1184124 | T2301 | TRIACS SENSIBLES DE SILICIUM DE PORTE | General Electric Solid State |
| 1184125 | T2301A | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, Vdrom 100 V. | General Electric Solid State |
| 1184126 | T2301B | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, Vdrom 200 V. | General Electric Solid State |
| 1184127 | T2301D | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, Vdrom 400 V. | General Electric Solid State |
| 1184128 | T2301F | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, 50 V. Vdrom | General Electric Solid State |
| 1184129 | T2301M | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, Vdrom 600 V. | General Electric Solid State |
| 1184130 | T2301N | THYRISTORS DE COMMANDE DE PHASE | etc |
| 1184131 | T2301N | 2.5-A triac sensible au silicium-porte. Porte Max 4 mA, Vdrom 800 V. | General Electric Solid State |
| 1184132 | T2302 | TRIACS SENSIBLES DE SILICIUM DE PORTE | General Electric Solid State |
| 1184133 | T2302A | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 100 V. | General Electric Solid State |
| 1184134 | T2302B | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 200 V. | General Electric Solid State |
| 1184135 | T2302D | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 400 V. | General Electric Solid State |
| 1184136 | T2302F | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 50 V. | General Electric Solid State |
| 1184137 | T2302M | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 600 V. | General Electric Solid State |
| 1184138 | T2302N | 2.5-A triac sensible au silicium-porte. Porte Max 10 mA, Vdrom 800 V. | General Electric Solid State |
| 1184139 | T2316160A | MODE RAPIDE de PAGE de la RAM 16 DYNAMIQUE de 1024K X | Taiwan Memory Technology |
| 1184140 | T2316160A | 4,5 à 5,5; 1.2W; 1024K x 16 RAM dynamique: Fast Fashion Page | TM Technology |
| 1184141 | T2316160A-45 | MODE RAPIDE de PAGE de la RAM 16 DYNAMIQUE de 1024K X | Taiwan Memory Technology |
| 1184142 | T2316160A-60 | MODE RAPIDE de PAGE de la RAM 16 DYNAMIQUE de 1024K X | Taiwan Memory Technology |
| 1184143 | T2316162A | 1024K X 16 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184144 | T2316162A | 4,5 à 5,5; 1.2W; 1024K x 16 RAM dynamique: EDO page mode | TM Technology |
| 1184145 | T2316162A-45 | 1024K X 16 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184146 | T2316162A-50 | 1024K X 16 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184147 | T2316162A-60 | 1024K X 16 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184148 | T2316405A | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184149 | T2316405A | 0,5 à 4.6V; 1.0W; 4M x 4 RAM dynamique: EDO page mode | TM Technology |
| 1184150 | T2316405A-10 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184151 | T2316405A-50 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184152 | T2316405A-60 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184153 | T2316405A-70 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184154 | T2316407A | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184155 | T2316407A | 0,5 à 4.6V; 1.0W; 4M x 4 RAM dynamique: EDO page mode | TM Technology |
| 1184156 | T2316407A-10 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184157 | T2316407A-50 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184158 | T2316407A-60 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184159 | T2316407A-70 | 4M x 4 MODE DYNAMIQUE de PAGE de la RAM EDO | Taiwan Memory Technology |
| 1184160 | T2320 | TRIACS SENSIBLES DE SILICIUM DE LA PORTE 2.5-A | General Electric Solid State |
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