| Nr. | Nom de partie | Description | Fabricant |
| 415801 | FG4000GX-90DA | TYPE DE DOSSIER DE PRESSE D'UTILISATION D'INVERSEUR DE PUISSANCE ÉLEVÉE | Powerex Power Semiconductors |
| 415802 | FG4000HX-90DS | TYPE D'arrêt de DOSSIER de PRESSE d'cUtilisation d'cInverseur de PUISSANCE ÉLEVÉE de THYRISTORS de PORTE de MITSUBISHI | Mitsubishi Electric Corporation |
| 415803 | FG50N06L | Transistors MOSFET De niveau De Puissance De N-Canal De 50A/60V/0,022 Ohms/Logique | Intersil |
| 415804 | FG6000AU-120D | TYPE D'arrêt de DOSSIER de PRESSE d'cUtilisation d'cInverseur de PUISSANCE ÉLEVÉE de THYRISTORS de PORTE de MITSUBISHI | Mitsubishi Electric Corporation |
| 415805 | FG654301 | MOSFET petit signal | Panasonic |
| 415806 | FG694301 | MOSFET petit signal | Panasonic |
| 415807 | FG6K4206 | MOSFET pour convertisseur DC-DC | Panasonic |
| 415808 | FGA15N120AND | Discret, NPT IGBT avec la diode | Fairchild Semiconductor |
| 415809 | FGA15N120ANDTU | Discret, NPT IGBT avec la diode | Fairchild Semiconductor |
| 415810 | FGA15N120ANTDTU | 1200V, 15A, IGBT NPT Trench | Fairchild Semiconductor |
| 415811 | FGA15N120FTD | 1200V, IGBT 16A Champ arrêt Trench | Fairchild Semiconductor |
| 415812 | FGA15S125P | 1250V, 15A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415813 | FGA180N33AT | IGBT discrets | Fairchild Semiconductor |
| 415814 | FGA180N33ATD | IGBT 330V PDP Trench | Fairchild Semiconductor |
| 415815 | FGA20N120FTD | 1200V, 20A, IGBT Champ arrêt Trench | Fairchild Semiconductor |
| 415816 | FGA20S120M | 1200V, 20A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415817 | FGA20S125P | 1250V, 20A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415818 | FGA20S140P | 1400V, 20A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415819 | FGA25N120AN | Discret, NPT IGBT | Fairchild Semiconductor |
| 415820 | FGA25N120AND | Copak IGBT Discret | Fairchild Semiconductor |
| 415821 | FGA25N120ANDTU | Copak IGBT Discret | Fairchild Semiconductor |
| 415822 | FGA25N120ANTD | Fossé IGBT De 1200V NPT | Fairchild Semiconductor |
| 415823 | FGA25N120ANTDTU | 1200V, 25A, IGBT NPT Trench | Fairchild Semiconductor |
| 415824 | FGA25N120ANTU | Discret, NPT IGBT | Fairchild Semiconductor |
| 415825 | FGA25N120FTD | 1200V, IGBT 25A Champ arrêt Trench | Fairchild Semiconductor |
| 415826 | FGA25N12ANTD | Fossé IGBT De 1200V NPT | Fairchild Semiconductor |
| 415827 | FGA25S125P | 1250V, 25A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415828 | FGA30N120FTD | 1200V, 30A, IGBT Champ arrêt Trench | Fairchild Semiconductor |
| 415829 | FGA30N60LSD | 600V, 30A, PT IGBT | Fairchild Semiconductor |
| 415830 | FGA30N65SMD | 650V, 30A, Champ arrêt IGBT | Fairchild Semiconductor |
| 415831 | FGA30S120P | 1300V, 30A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415832 | FGA40N60UFD | Ultrafast IGBT | Fairchild Semiconductor |
| 415833 | FGA40N60UFDTU | Ultrafast IGBT | Fairchild Semiconductor |
| 415834 | FGA40N65SMD | 650V, 40A, Champ arrêt IGBT | Fairchild Semiconductor |
| 415835 | FGA50N100BNT | 1000V, IGBT 50A TNP Trench | Fairchild Semiconductor |
| 415836 | FGA50N100BNTD | 1000V, TNP Trench IGBT | Fairchild Semiconductor |
| 415837 | FGA50N100BNTD2 | 1000V, TNP Trench IGBT | Fairchild Semiconductor |
| 415838 | FGA50N60LS | Le circuit discret et court a évalué IGBT avec la diode (basse tension de saturation) | Fairchild Semiconductor |
| 415839 | FGA50S110P | 1100V, 50A, court-circuité anode IGBT | Fairchild Semiconductor |
| 415840 | FGA60N60UFD | 600V, 60A, Champ arrêt IGBT | Fairchild Semiconductor |
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