| Nr. | Teilname | Beschreibung | Hersteller |
| 1 | -7L | 536870912-BIT (8388608 - WORD DURCH 64-BIT)SYNCHRONOUSDRAM | Mitsubishi Electric Corporation |
| 2 | -8 | 536870912-BIT (8388608 - WORD DURCH 64-BIT)SYNCHRONOUSDRAM | Mitsubishi Electric Corporation |
| 3 | -8L | 536870912-BIT (8388608 - WORD DURCH 64-BIT)SYNCHRONOUSDRAM | Mitsubishi Electric Corporation |
| 4 | 0-1462000-1 | 2 Relais des Pfostens telecom/signal durch die Bohrung Art (THT) Non-polarized. 1 Spule nicht-verriegelnd | Tyco Electronics |
| 5 | 0-1462000-7 | 2 Relais des Pfostens telecom/signal durch die Bohrung Art (THT) Non-polarized. 1 Spule nicht-verriegelnd | Tyco Electronics |
| 6 | 0002 | GROSSE GESCHWINDIGKEIT, PUFFER-VERSTÄRKER AMPERE | M.S. Kennedy Corp. |
| 7 | 0032 | GROSSE GESCHWINDIGKEIT, FET EINGANG DIFFERENTIAL OP-AMP | M.S. Kennedy Corp. |
| 8 | 0033 | FET EINGEGEBENER SCHNELLSPANNUNG FOLLOWER/BUFFER VERSTÄRKER | M.S. Kennedy Corp. |
| 9 | 01-XC6206 | XC6206 | Torex Semiconductor |
| 10 | 0100MS | Magnetisches Schild | Texas Instruments |
| 11 | 0104-100 | 100 W, 28 V, 100-400 MHz, ausgewogene Transistor | Acrian |
| 12 | 0104-100 | 100 W, 28 V, 100-400 MHz gemeinsamen Emitter-Transistor | GHz Technology |
| 13 | 0104-100-2 | 100 W, 28 V, 100-400 MHz, ausgewogene Transistor | Acrian |
| 14 | 0105-100 | 100 W, 28 V, 100-500 MHz, UHF ausgewogene Transistor | Acrian |
| 15 | 0105-100 | 100 W, 28 V, 100-500 MHz gemeinsamen Emitter-Transistor | GHz Technology |
| 16 | 0105-100-2 | 100 W, 28 V, 100-500 MHz, UHF ausgewogene Transistor | Acrian |
| 17 | 0105-100-3 | 100 W, 28 V, 100-500 MHz, UHF ausgewogene Transistor | Acrian |
| 18 | 0105-12 | 12 W, 28 V, 100-500 MHz, UHF ausgewogen Transistor | Acrian |
| 19 | 0105-12 | 12 W, 28 V, 100-500 MHz gemeinsamen Emitter-Transistor | GHz Technology |
| 20 | 0105-12-2 | 12 W, 28 V, 100-500 MHz, UHF ausgewogen Transistor | Acrian |
| 21 | 0105-50 | 50 W, 28 V, 100-500 MHz, UHF ausgewogen Transistor | Acrian |
| 22 | 0105-50 | 50 W, 28 V, 100-500 MHz gemeinsamen Emitter-Transistor | GHz Technology |
| 23 | 0105-50-2 | 50 W, 28 V, 100-500 MHz, UHF ausgewogen Transistor | Acrian |
| 24 | 015A2.0 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 25 | 015A2.2 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 26 | 015A2.4 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 27 | 015A2.7 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 28 | 015A3.0 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 29 | 015A3.3 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 30 | 015A3.6 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 31 | 015A3.9 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 32 | 015A4.3 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 33 | 015A4.7 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 34 | 015A5.1 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 35 | 015A5.6 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 36 | 015A6.2 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 37 | 015A6.8 | Diode Silikon-Epitaxial- Planare Art | TOSHIBA |
| 38 | 015AZ10 | Diode Silikon-Epitaxial- Planare Art Konstante Spannung Regelung Anwendungen | TOSHIBA |
| 39 | 015AZ10-X | Silizium-Diode für konstante Spannungsregelung Anwendungen | TOSHIBA |
| 40 | 015AZ10-Y | Silizium-Diode für konstante Spannungsregelung Anwendungen | TOSHIBA |
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