Nr. | Teilname | Beschreibung | Hersteller |
1162561 | STB20NM60D | N-Kanal 600V - 0.26Y - 20A - D2PAK | ST Microelectronics |
1162562 | STB20NM60T4 | N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH ENERGIE MOSFET | ST Microelectronics |
1162563 | STB20PF75 | P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFETII ENERGIE Mosfet | ST Microelectronics |
1162564 | STB20PF75T4 | P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFETII ENERGIE Mosfet | ST Microelectronics |
1162565 | STB210NF02 | N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
1162566 | STB210NF02 | N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
1162567 | STB210NF02-1 | N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
1162568 | STB210NF02-1 | N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
1162569 | STB210NF02T4 | N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
1162570 | STB21N65M5 | N-Kanal 650 V, 0.150 Ohm, 17 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK | ST Microelectronics |
1162571 | STB21N90K5 | N-Kanal 900 V, 0,25 Ohm, 18,5 A D2PAK Zener-geschützt SuperMESH (TM) 5 Power MOSFET | ST Microelectronics |
1162572 | STB21NK50Z | N-Kanal 500 V - 0,23 Y - 17 A - D2PAK Zener-geschützt superMESHTM MOSFET | ST Microelectronics |
1162573 | STB21NM60ND | N-Kanal 600 V, 0,17 Ohm typ. 17 A, FDmesh (TM) II Power MOSFET (Whit schnelle Diode) in D2PAK Verpackung | ST Microelectronics |
1162574 | STB22NE03L | N-CHANNEL 30V - 0.034 OHM - 22A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
1162575 | STB22NE03L | N-CHANNEL 30V - 0.034 OHM - 22A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
1162576 | STB22NE03L | N - FÜHRUNG 30V - 0.034 Ohm - 22A TO-263 STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
1162577 | STB22NM50 | N-CHANNEL 500 V - 0.16 OHM - 20 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE Mosfet | ST Microelectronics |
1162578 | STB22NM50-1 | N-CHANNEL 500 V - 0.16 OHM - 20 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE Mosfet | ST Microelectronics |
1162579 | STB22NM60 | N-CHANNEL 600 V - 0.19 OHM - 22 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE Mosfet | ST Microelectronics |
1162580 | STB22NM60-1 | N-CHANNEL 600 V - 0.19 OHM - 22 Ein TO-220/FP/D2PAK/I2PAK MDMESH ENERGIE Mosfet | ST Microelectronics |
1162581 | STB22NM60N | N-Kanal 600 V, 0,2 Ohm, 16 A MDmesh (TM) II Power MOSFET in D2PAK | ST Microelectronics |
1162582 | STB22NS25Z | N-CHANNEL 250V 0.13 OHM 22A TO-220/D2PAK ZENER-PROTECTED INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
1162583 | STB22NS25ZT4 | N-CHANNEL 250V 0.13 OHM 22A TO-220/D2PAK ZENER-PROTECTED INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
1162584 | STB23NM50N | N-Kanal 500 V, 0.162 Ohm, 17 A, D2PAK MDmesh (TM) II Power MOSFET | ST Microelectronics |
1162585 | STB23NM60ND | N-Kanal 600 V, 0.150 Ohm, 19,5 A, FDmesh (TM) II Power MOSFET (mit schnellen Diode) D2PAK | ST Microelectronics |
1162586 | STB24N60DM2 | N-Kanal 600 V, 0.175 Ohm typ. 18 A FDmesh II Plus (TM) niedriger Qg Power MOSFET in D2PAK Verpackung | ST Microelectronics |
1162587 | STB24N60M2 | N-Kanal 600 V, 0.168 Ohm typ. 18 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in D2PAK Verpackung | ST Microelectronics |
1162588 | STB24NF10 | N-CHANNEL 100V - 0.055 OHM - 26A TO-220/D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
1162589 | STB24NF10 | N-CHANNEL 100V - 0.07 OHM - 24A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
1162590 | STB24NF10 | N - FÜHRUNG 100V - 0.07Ohm - 24A TO-263 NIEDRIGER GATTER-AUFLADUNG STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
1162591 | STB24NF10T4 | N-CHANNEL 100V - 0.055 OHM - 26A TO-220/D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
1162592 | STB24NM60N | N-Kanal 600 V, 0.168 Ohm, 17 A MDmesh (TM) II Power MOSFET D2PAK | ST Microelectronics |
1162593 | STB24NM65N | N-Kanal 650 V - 0,16 Y - 19 A - TO-220 / FP - D2 / I2PAK - TO-247 der zweiten Generation MDmesh ™ Leistungs-MOSFET | ST Microelectronics |
1162594 | STB25N80K5 | N-Kanal 800 V, 0,19 Ohm typ. 19,5 A SuperMESH (TM) 5 Power MOSFET in D2PAK Verpackung | ST Microelectronics |
1162595 | STB25NM50N | N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
1162596 | STB25NM50N-1 | N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
1162597 | STB25NM50NT4 | N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
1162598 | STB25NM60N | N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
1162599 | STB25NM60N-1 | N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
1162600 | STB25NM60ND | N-Kanal 600 V, 0,13 Ohm typ. 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK Verpackung | ST Microelectronics |
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