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Datenblaetter Gefunden :: 1351360Seite: << | 6396 | 6397 | 6398 | 6399 | 6400 | 6401 | 6402 | 6403 | 6404 | 6405 | 6406 | >>
Nr.TeilnameBeschreibungHersteller
256001BD159-DMittlerer Energie NPN Silikon-PlastiktransistorON Semiconductor
256002BD159STUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
256003BD165Mittlerer Plastiktransistor Des Energie Silikon-NPNMotorola
256004BD16520.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD166Continental Device India Limited
256005BD166Mittlerer Plastiktransistor Des Energie Silikon-PNPMotorola
256006BD16620.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD165Continental Device India Limited
256007BD16720.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD168Continental Device India Limited
256008BD16820.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD167Continental Device India Limited
256009BD168PNP Silizium-Leistungstransistor. 1,5 A, 60 V, 20 W.Motorola
256010BD169Mittlerer Plastiktransistor Des Energie Silikon-NPNMotorola
256011BD16920.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD170Continental Device India Limited
256012BD17020.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD169Continental Device India Limited
256013BD170PNP Silizium-Leistungstransistor. 1,5 A, 80 V, 20 W.Motorola
256014BD175NPN Epitaxial- Silikon-TransistorFairchild Semiconductor
256015BD175Verbleiter Energie Transistor-Universeller ZweckCentral Semiconductor
256016BD17530.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE.Continental Device India Limited
256017BD175-1030.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63-160 hFE.Continental Device India Limited
256018BD175-1630.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100-250 hFE.Continental Device India Limited
256019BD175-630.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40-100 hFE.Continental Device India Limited



256020BD17510STUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
256021BD17516STUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
256022BD1756STUNPN Epitaxial- Silikon-TransistorFairchild Semiconductor
256023BD176PNP Epitaxial- Silikon-TransistorFairchild Semiconductor
256024BD176Verbleiter Energie Transistor-Universeller ZweckCentral Semiconductor
256025BD17630.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE.Continental Device India Limited
256026BD176-1030.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63-160 hFE.Continental Device India Limited
256027BD176-1630.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100-250 hFE.Continental Device India Limited
256028BD176-630.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40-100 hFE.Continental Device India Limited
256029BD17610STUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
256030BD1766STUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
256031BD177Verbleiter Energie Transistor-Universeller ZweckCentral Semiconductor
256032BD177Mittlere Energie linear und Schaltung AnwendungenFairchild Semiconductor
256033BD17730.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE.Continental Device India Limited
256034BD177-1030.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63-160 hFE.Continental Device India Limited
256035BD177-630.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-100 hFE.Continental Device India Limited
256036BD178PNP Epitaxial- Silikon-TransistorFairchild Semiconductor
256037BD178Verbleiter Energie Transistor-Universeller ZweckCentral Semiconductor
256038BD17830.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE.Continental Device India Limited
256039BD178-1030.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63-160 hFE.Continental Device India Limited
256040BD178-630.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-100 hFE.Continental Device India Limited
Datenblaetter Gefunden :: 1351360Seite: << | 6396 | 6397 | 6398 | 6399 | 6400 | 6401 | 6402 | 6403 | 6404 | 6405 | 6406 | >>
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