Nr. | Teilname | Beschreibung | Hersteller |
256001 | BD159-D | Mittlerer Energie NPN Silikon-Plastiktransistor | ON Semiconductor |
256002 | BD159STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256003 | BD165 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
256004 | BD165 | 20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD166 | Continental Device India Limited |
256005 | BD166 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
256006 | BD166 | 20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD165 | Continental Device India Limited |
256007 | BD167 | 20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD168 | Continental Device India Limited |
256008 | BD168 | 20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD167 | Continental Device India Limited |
256009 | BD168 | PNP Silizium-Leistungstransistor. 1,5 A, 60 V, 20 W. | Motorola |
256010 | BD169 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
256011 | BD169 | 20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD170 | Continental Device India Limited |
256012 | BD170 | 20.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Ergänzende BD169 | Continental Device India Limited |
256013 | BD170 | PNP Silizium-Leistungstransistor. 1,5 A, 80 V, 20 W. | Motorola |
256014 | BD175 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256015 | BD175 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256016 | BD175 | 30.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. | Continental Device India Limited |
256017 | BD175-10 | 30.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63-160 hFE. | Continental Device India Limited |
256018 | BD175-16 | 30.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100-250 hFE. | Continental Device India Limited |
256019 | BD175-6 | 30.000W Schalt NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40-100 hFE. | Continental Device India Limited |
256020 | BD17510STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256021 | BD17516STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256022 | BD1756STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256023 | BD176 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256024 | BD176 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256025 | BD176 | 30.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40 hFE. | Continental Device India Limited |
256026 | BD176-10 | 30.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 63-160 hFE. | Continental Device India Limited |
256027 | BD176-16 | 30.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100-250 hFE. | Continental Device India Limited |
256028 | BD176-6 | 30.000W Schalt PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 40-100 hFE. | Continental Device India Limited |
256029 | BD17610STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256030 | BD1766STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256031 | BD177 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256032 | BD177 | Mittlere Energie linear und Schaltung Anwendungen | Fairchild Semiconductor |
256033 | BD177 | 30.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. | Continental Device India Limited |
256034 | BD177-10 | 30.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63-160 hFE. | Continental Device India Limited |
256035 | BD177-6 | 30.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-100 hFE. | Continental Device India Limited |
256036 | BD178 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256037 | BD178 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256038 | BD178 | 30.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. | Continental Device India Limited |
256039 | BD178-10 | 30.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63-160 hFE. | Continental Device India Limited |
256040 | BD178-6 | 30.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40-100 hFE. | Continental Device India Limited |
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