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Datenblaetter Gefunden :: 1351360Seite: << | 10985 | 10986 | 10987 | 10988 | 10989 | 10990 | 10991 | 10992 | 10993 | 10994 | 10995 | >>
Nr.TeilnameBeschreibungHersteller
439561GES2222APlanar passi epitaktischen NPN Silikon-Transistor. 40V, 400mA.General Electric Solid State
439562GES2646Silicon Unijunktionstransistor. 30V, 50mA.General Electric Solid State
439563GES2647Silicon Unijunktionstransistor. 30V, 50mA.General Electric Solid State
439564GES2904Planar epitaktischen PNP Silikon-Transistor. 40V, 600mA.General Electric Solid State
439565GES2904APlanar epitaktischen PNP Silikon-Transistor. 60V, 600mA.General Electric Solid State
439566GES2905Planar epitaktischen PNP Silikon-Transistor. 40V, 600mA.General Electric Solid State
439567GES2905APlanar epitaktischen PNP Silikon-Transistor. 60V, 600mA.General Electric Solid State
439568GES2906Planar passi epitaktischen PNP Silikon-Transistor. -40 V, -350mA.General Electric Solid State
439569GES2906APlanar passi epitaktischen PNP Silikon-Transistor. -40 V, -350mA.General Electric Solid State
439570GES2907Planar passi epitaktischen PNP Silikon-Transistor. -40 V, -350mA.General Electric Solid State
439571GES2907APlanar passi epitaktischen PNP Silikon-Transistor. -40 V, -350mA.General Electric Solid State
439572GES3414Silikon-Transistor. 25V, 500mA.General Electric Solid State
439573GES3415Silikon-Transistor. 25V, 500mA.General Electric Solid State
439574GES3416Silikon-Transistor. 50V, 500mA.General Electric Solid State
439575GES3417Silikon-Transistor. 50V, 500mA.General Electric Solid State
439576GES5305TRANSISTOREN DES SILIKON-DARLINGTONGeneral Electric Solid State
439577GES5306TRANSISTOREN DES SILIKON-DARLINGTONGeneral Electric Solid State
439578GES5306ATRANSISTOREN DES SILIKON-DARLINGTONGeneral Electric Solid State
439579GES5307Planar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA.General Electric Solid State



439580GES5308Planar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA.General Electric Solid State
439581GES5308APlanar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA.General Electric Solid State
439582GES5401SILIKON-TRANSISTORENGeneral Electric Solid State
439583GES5551SILIKON-TRANSISTORENGeneral Electric Solid State
439584GES5810Planar passi epitaktischen NPN Silikon-Transistor. 25V, 750mA.General Electric Solid State
439585GES5810-J1Kleine Signal-TransistorenCentral Semiconductor
439586GES5811Planar passi epitaktischen PNP Silikon-Transistor. -25 V, -750mA.General Electric Solid State
439587GES5811-J1Kleine Signal-TransistorenCentral Semiconductor
439588GES5812Planar passi epitaktischen NPN Silikon-Transistor. 25V, 750mA.General Electric Solid State
439589GES5812-J1Kleine Signal-TransistorenCentral Semiconductor
439590GES5813Planar passi epitaktischen PNP Silikon-Transistor. -25 V, -750mA.General Electric Solid State
439591GES5813-J1Kleine Signal-TransistorenCentral Semiconductor
439592GES5814Planar passi epitaktischen NPN Silikon-Transistor. 40V, 750mA.General Electric Solid State
439593GES5814-J1Kleine Signal-TransistorenCentral Semiconductor
439594GES5815Planar passi epitaktischen PNP Silikon-Transistor. -40 V, -750mA.General Electric Solid State
439595GES5815-J1Kleine Signal-TransistorenCentral Semiconductor
439596GES5816Planar passi epitaktischen NPN Silikon-Transistor. 40V, 750mA.General Electric Solid State
439597GES5816-J1Kleine Signal-TransistorenCentral Semiconductor
439598GES5817Planar passi epitaktischen PNP Silikon-Transistor. -40 V, -750mA.General Electric Solid State
439599GES5817-J1Kleine Signal-TransistorenCentral Semiconductor
439600GES5818Planar passi epitaktischen NPN Silikon-Transistor. 40V, 750mA.General Electric Solid State
Datenblaetter Gefunden :: 1351360Seite: << | 10985 | 10986 | 10987 | 10988 | 10989 | 10990 | 10991 | 10992 | 10993 | 10994 | 10995 | >>
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