| Nr. | Teilname | Beschreibung | Hersteller |
| 45281 | 2N3486 | Span-Art Polarität PNP der 2C2907A Geometrie-0600 | Semicoa Semiconductor |
| 45282 | 2N3486A | PNP Transistor | Microsemi |
| 45283 | 2N3486A | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45284 | 2N3486A | Span-Art Polarität PNP der 2C2907A Geometrie-0600 | Semicoa Semiconductor |
| 45285 | 2N3494 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45286 | 2N3495 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45287 | 2N3496 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45288 | 2N3496 | 0.400W General Purpose PNP Metall kann der Transistor. 80V Vceo, 0.100A Ic, 35 hFE. | Continental Device India Limited |
| 45289 | 2N3497 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45290 | 2N3497 | Schreiben Sie 2N3498 Polarität NPN Der Geometrie-5620 | Semicoa Semiconductor |
| 45291 | 2N3497 | 0.400W General Purpose PNP Metall kann der Transistor. 120V Vceo, 0.100A Ic, 35 hFE. | Continental Device India Limited |
| 45292 | 2N3498 | NPN Transistor | Microsemi |
| 45293 | 2N3498 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45294 | 2N3498 | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45295 | 2N3498 | 1.000W RF NPN Metall kann der Transistor. 100V Vceo, 0,500A Ic, 20 hFE. | Continental Device India Limited |
| 45296 | 2N3498L | NPN Transistor | Microsemi |
| 45297 | 2N3498L | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45298 | 2N3499 | NPN Transistor | Microsemi |
| 45299 | 2N3499 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45300 | 2N3499 | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45301 | 2N3499 | 1.000W RF NPN Metall kann der Transistor. 100V Vceo, 0,500A Ic, 35 hFE. | Continental Device India Limited |
| 45302 | 2N3499L | NPN Transistor | Microsemi |
| 45303 | 2N3499L | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45304 | 2N3500 | NPN Transistor | Microsemi |
| 45305 | 2N3500 | UNIVERSELLER TRANSISTOR (NPN SILIKON) | Boca Semiconductor Corporation |
| 45306 | 2N3500 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45307 | 2N3500 | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45308 | 2N3500 | 1.000W RF NPN Metall kann der Transistor. 150V Vceo, 0.300A Ic, 20 hFE. | Continental Device India Limited |
| 45309 | 2N3500L | NPN Transistor | Microsemi |
| 45310 | 2N3500L | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45311 | 2N3501 | NPN Transistor | Microsemi |
| 45312 | 2N3501 | NPN Transistor | Microsemi |
| 45313 | 2N3501 | UNIVERSELLER TRANSISTOR (NPN SILIKON) | Boca Semiconductor Corporation |
| 45314 | 2N3501 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 45315 | 2N3501 | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45316 | 2N3501 | 1.000W RF NPN Metall kann der Transistor. 150V Vceo, 0.300A Ic, 35 hFE. | Continental Device India Limited |
| 45317 | 2N3501CSM4 | HOCHSPANNUNG, MITTLERE ENERGIE, NPN TRANSISTOR IN Einem HERMETISCH KERAMISCHEN OBERFLÄCHENEINFASSUNG SIEGELPAKET FÜR HOHE ZUVERLÄSSIGKEIT ANWENDUNGEN | SemeLAB |
| 45318 | 2N3501L | NPN Transistor | Microsemi |
| 45319 | 2N3501L | Span-Art Polarität NPN Der 2C3501 Geometrie-5620 | Semicoa Semiconductor |
| 45320 | 2N3502 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | SemeLAB |
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