| Nr. | Teilname | Beschreibung | Hersteller |
| 47281 | 2N5306 | NPN Darlington Transistor | Fairchild Semiconductor |
| 47282 | 2N5306 | Verbleiter Kleiner Signal-Transistor Darlington | Central Semiconductor |
| 47283 | 2N5306 | Planar epitaktischen passi NPN Silizium Darlington-Transistor. 25V, 300mA. | General Electric Solid State |
| 47284 | 2N5306A | TRANSISTOREN DES SILIKON-DARLINGTON | General Electric Solid State |
| 47285 | 2N5306A | TRANSISTOREN DES SILIKON-DARLINGTON | General Electric Solid State |
| 47286 | 2N5306_D74Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47287 | 2N5307 | NPN Zweck-Verstärker | Fairchild Semiconductor |
| 47288 | 2N5307 | NPN DARLINGTON VERSTÄRKER | Micro Electronics |
| 47289 | 2N5307 | Planar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA. | General Electric Solid State |
| 47290 | 2N5307_D74Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47291 | 2N5308 | NPN Darlington Transistor | Fairchild Semiconductor |
| 47292 | 2N5308 | NPN DARLINGTON VERSTÄRKER | Micro Electronics |
| 47293 | 2N5308 | Verbleiter Kleiner Signal-Transistor Darlington | Central Semiconductor |
| 47294 | 2N5308 | Planar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA. | General Electric Solid State |
| 47295 | 2N5308A | Planar epitaktischen passi NPN Silizium Darlington-Transistor. 40V, 300mA. | General Electric Solid State |
| 47296 | 2N5308_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47297 | 2N5308_D27Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47298 | 2N5308_D74Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47299 | 2N5308_D75Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 47300 | 2N5320 | KLEINER TRANSISTOR DES SIGNAL-NPN | ST Microelectronics |
| 47301 | 2N5320 | KLEINE TRANSISTOREN DES SIGNAL-NPN | SGS Thomson Microelectronics |
| 47302 | 2N5320 | SCHALTUNG TRANSISTOREN (NPN SILIKON) | Boca Semiconductor Corporation |
| 47303 | 2N5320 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47304 | 2N5320 | 10 Silikon-Energie Des Watt-NPN-PNP | Fairchild Semiconductor |
| 47305 | 2N5320 | 10.000W Schalt NPN Metall kann Transistor. 75V Vceo, 2.000A Ic, 30-130 hFE. | Continental Device India Limited |
| 47306 | 2N5320 | Allzweck NPN Silizium-Leistungstransistor. | General Electric Solid State |
| 47307 | 2N5321 | KLEINE TRANSISTOREN DES SIGNAL-NPN | SGS Thomson Microelectronics |
| 47308 | 2N5321 | SCHALTUNG TRANSISTOREN (NPN SILIKON) | Boca Semiconductor Corporation |
| 47309 | 2N5321 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47310 | 2N5321 | 10 Silikon-Energie Des Watt-NPN-PNP | Fairchild Semiconductor |
| 47311 | 2N5321 | KLEINE TRANSISTOREN DES SIGNAL-NPN | ST Microelectronics |
| 47312 | 2N5321 | 10.000W Schalt NPN Metall kann Transistor. 50V Vceo, 2.000A Ic, 40-250 hFE. | Continental Device India Limited |
| 47313 | 2N5321 | Allzweck NPN Silizium-Leistungstransistor. | General Electric Solid State |
| 47314 | 2N5322 | KLEINER TRANSISTOR DES SIGNAL-PNP | ST Microelectronics |
| 47315 | 2N5322 | KLEINE TRANSISTOREN DES SIGNAL-PNP | SGS Thomson Microelectronics |
| 47316 | 2N5322 | SCHALTUNG TRANSISTOREN (PNP SILIKON) | Boca Semiconductor Corporation |
| 47317 | 2N5322 | MITTLERE SPANNUNG SCHNELLSCHALTER | SemeLAB |
| 47318 | 2N5322 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47319 | 2N5322 | 10 Silikon-Energie Des Watt-NPN-PNP | Fairchild Semiconductor |
| 47320 | 2N5322 | Allzweck PNP Silizium-Leistungstransistor. | General Electric Solid State |
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