| Nr. | Teilname | Beschreibung | Hersteller |
| 49561 | 2N7002E-13-F | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49562 | 2N7002E-7-F | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49563 | 2N7002F | TrenchMOS(tm) Logik-Niveau Fet | Philips |
| 49564 | 2N7002F | N-Kanal-FET TrenchMOS Logikpegel | NXP Semiconductors |
| 49565 | 2N7002K | N-Führung 60-V (D-S) Mosfet | Vishay |
| 49566 | 2N7002K | 2N7002K; Trenchmos (tm) Logik-Niveau FET | Philips |
| 49567 | 2N7002K | Kleinsignal-MOSFET 60V 380mA 1,6 Ohm Single N-Kanal-SOT-23 | ON Semiconductor |
| 49568 | 2N7002K | N-Führung Verbesserung Modus Fangen Effekt-Transistor | Fairchild Semiconductor |
| 49569 | 2N7002K | N-Kanal-FET TrenchMOS Zwischenebene | NXP Semiconductors |
| 49570 | 2N7002K | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49571 | 2N7002K-13 | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49572 | 2N7002K-7 | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49573 | 2N7002K-HF | Halogenfreie MOSFET, V DS = 60V, I D = 0.115A, P D = 225MW | Comchip Technology |
| 49574 | 2N7002KW | N-Führung Verbesserung Modus Fangen Effekt-Transistor | Fairchild Semiconductor |
| 49575 | 2N7002L | Kleiner Signal MOSFET 115 MA, 60 Volt | ON Semiconductor |
| 49576 | 2N7002LT1 | Kleine Signal MOSFET 115 mAmps, 60 Volt | Leshan Radio Company |
| 49577 | 2N7002LT1 | FALL 318-08, STYLE 21 SOT-23 (TO-236AB) | Motorola |
| 49578 | 2N7002LT1 | Kleiner Signal MOSFET 115 MA, 60 Volt | ON Semiconductor |
| 49579 | 2N7002LT1 | N-CHANNEL VERBESSERUNG | TRSYS |
| 49580 | 2N7002LT1 | 60 V, N-Kanal-Anreicherungs | TRANSYS Electronics Limited |
| 49581 | 2N7002LT1-D | Kleine Signal MOSFET 115 mAmps, 60 Volt N-Führung SOT.23 | ON Semiconductor |
| 49582 | 2N7002LT1G | Kleiner Signal MOSFET 115 MA, 60 Volt | ON Semiconductor |
| 49583 | 2N7002LT3 | Kleine Signal MOSFET 115 mAmps, 60 Volt | Leshan Radio Company |
| 49584 | 2N7002LT3 | Kleiner Signal MOSFET 115 MA, 60 Volt | ON Semiconductor |
| 49585 | 2N7002LT3G | Kleiner Signal MOSFET 115 MA, 60 Volt | ON Semiconductor |
| 49586 | 2N7002MTF | N-CHANNEL Kleiner Signal Mosfet | Fairchild Semiconductor |
| 49587 | 2N7002P | 60 V, 360 mA N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 49588 | 2N7002PS | 60 V, 320 mA Dual N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 49589 | 2N7002PT | 60 V, 310 mA N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 49590 | 2N7002PV | 60 V, 350 mA Dual N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 49591 | 2N7002PW | 60 V, 310 mA N-Kanal-Trench-MOSFET | NXP Semiconductors |
| 49592 | 2N7002T | MOSFETS | Diodes |
| 49593 | 2N7002T | N-Führung Verbesserung Modus Fangen Effekt-Transistor | Fairchild Semiconductor |
| 49594 | 2N7002T-7-F | N-Kanal-Anreicherungs-MOSFET | Diodes |
| 49595 | 2N7002V | DOPPELN-CHANNEL VERBESSERUNG MODUS FANGEN EFFEKT-TRANSISTOR auf | Diodes |
| 49596 | 2N7002V | DOPPELN-CHANNEL VERBESSERUNG MODUS FANGEN EFFEKT-TRANSISTOR auf | Diodes |
| 49597 | 2N7002V | N-Führung Verbesserung Modus Fangen Effekt-Transistor | Fairchild Semiconductor |
| 49598 | 2N7002V-7 | DOPPELN-CHANNEL VERBESSERUNG MODUS FANGEN EFFEKT-TRANSISTOR auf | Diodes |
| 49599 | 2N7002V-7 | DOPPELN-CHANNEL VERBESSERUNG MODUS FANGEN EFFEKT-TRANSISTOR auf | Diodes |
| 49600 | 2N7002V/VA | MOSFETS | Diodes |
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