| Nr. | Teilname | Beschreibung | Hersteller |
| 882001 | MJE350 | Energie 0.5A 300V PNP Silikon | ON Semiconductor |
| 882002 | MJE350 | 20.000W Schalt PNP Plastic Leaded Transistor. 300V Vceo, 0,500A Ic, 30-240 hFE. Ergänzende MJE340 | Continental Device India Limited |
| 882003 | MJE350 | -300 V, -500 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
| 882004 | MJE350-D | Mittlerer Energie PNP Silikon-Plastiktransistor | ON Semiconductor |
| 882005 | MJE350STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 882006 | MJE370 | SILIKON-ERGÄNZENDE ENERGIE TRANSISTOREN | Central Semiconductor |
| 882007 | MJE370 | SILIKON-ERGÄNZENDE ENERGIE TRANSISTOREN | Central Semiconductor |
| 882008 | MJE371 | 4 SILIKON DES AMPERE-ENERGIE TRANSISTOR-PNP 40 VOLT 40 WATT | Motorola |
| 882009 | MJE371 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882010 | MJE371 | Energie 4A 40V PNP Silikon | ON Semiconductor |
| 882011 | MJE371-D | PlastikMittel-energie PNP Silikon-Transistoren | ON Semiconductor |
| 882012 | MJE4340 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882013 | MJE4341 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882014 | MJE4342 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882015 | MJE4342 | 16 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 140-160 VOLT | Motorola |
| 882016 | MJE4343 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882017 | MJE4343 | 16 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 140-160 VOLT | Motorola |
| 882018 | MJE4343 | Energie 16A 160V NPN Ergänzendes Silikon | ON Semiconductor |
| 882019 | MJE4343-D | Hoch-Spannung Hohe Energie Transistoren NPN | ON Semiconductor |
| 882020 | MJE4350 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882021 | MJE4351 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882022 | MJE4352 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882023 | MJE4352 | 16 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 140-160 VOLT | Motorola |
| 882024 | MJE4353 | ENERGIE TRANSISTORS(16A, 100-160V, 125w) | MOSPEC Semiconductor |
| 882025 | MJE4353 | 16 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 140-160 VOLT | Motorola |
| 882026 | MJE4353 | Energie 16A 160V PNP Ergänzendes Silikon | ON Semiconductor |
| 882027 | MJE520 | SILIKON-ERGÄNZENDE ENERGIE TRANSISTOREN | Central Semiconductor |
| 882028 | MJE520 | SILIKON-ERGÄNZENDE ENERGIE TRANSISTOREN | Central Semiconductor |
| 882029 | MJE521 | TRANSISTOR DES SILIKON-NPN | ST Microelectronics |
| 882030 | MJE521 | TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 882031 | MJE521 | 4 SILIKON DES AMPERE-ENERGIE TRANSISTOR-NPN 40 VOLT 40 WATT | Motorola |
| 882032 | MJE521 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 882033 | MJE521 | Energie 4A 40V NPN Silikon | ON Semiconductor |
| 882034 | MJE521-D | PlastikMittel-energie NPN Silikon-Transistor | ON Semiconductor |
| 882035 | MJE5730 | 1.0 SILIKON DER AMPERE-ENERGIE TRANSISTOR-PNP 300-350-400 VOLT 40 WATT | Motorola |
| 882036 | MJE5730 | Energie 1A 300V Getrenntes PNP | ON Semiconductor |
| 882037 | MJE5730-D | Hochspannungs-PNP Silikon-Energie Transistoren | ON Semiconductor |
| 882038 | MJE5731 | 1.0 SILIKON DER AMPERE-ENERGIE TRANSISTOR-PNP 300-350-400 VOLT 40 WATT | Motorola |
| 882039 | MJE5731 | Energie 1A 350V Getrenntes PNP | ON Semiconductor |
| 882040 | MJE5731 | Energie 1A 350V Getrenntes PNP | ON Semiconductor |
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