| Nr. | Teilname | Beschreibung | Hersteller |
| 911841 | MTB2P50E | TMOS ENERGIE FET 2.0 AMPERE 500 VOLT | Motorola |
| 911842 | MTB2P50E | TMOS Energie Fet 500V 6.00Ohm | ON Semiconductor |
| 911843 | MTB2P50E-D | TMOS E-FET hohe Energie-Energie FET D2PAK für Oberflächeneinfassung P-Führung Verbesserung-Modus Silikon-Gatter | ON Semiconductor |
| 911844 | MTB2P50ET4 | TMOS Energie Fet 500V 6.00Ohm | ON Semiconductor |
| 911845 | MTB30N06VL | TMOS ENERGIE FET 30 AMPERE 60 VOLT | Motorola |
| 911846 | MTB30N06VL | Power MOSFET 30 Ampere, 60 Volt, Logic-Level- | ON Semiconductor |
| 911847 | MTB30N06VL-D | Energie Mosfet 30 Ampere, 60 Volt, Logik Waagerecht ausgerichtete N-Führung D2PAK | ON Semiconductor |
| 911848 | MTB30P06 | TMOS ENERGIE FET 30 AMPERE 60 VOLT | Motorola |
| 911849 | MTB30P06V | TMOS ENERGIE FET 30 AMPERE 60 VOLT | Motorola |
| 911850 | MTB30P06V | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911851 | MTB30P06V | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911852 | MTB30P06V-D | Energie Mosfet 30 Ampere, 60 Volt P-Führung D2PAK | ON Semiconductor |
| 911853 | MTB30P06VG | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911854 | MTB30P06VG | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911855 | MTB30P06VT4 | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911856 | MTB30P06VT4 | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911857 | MTB30P06VT4G | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911858 | MTB30P06VT4G | Energie Mosfet 30 Ampere, 60 Volt | ON Semiconductor |
| 911859 | MTB33N10E | TMOS ENERGIE FET 33 AMPERE 100 VOLT | Motorola |
| 911860 | MTB33N10E | Power MOSFET 33 Ampere, 100 Volt | ON Semiconductor |
| 911861 | MTB33N10E-D | Energie Mosfet 33 Ampere, 100 Volt N-Führung D2PAK | ON Semiconductor |
| 911862 | MTB36N06E | TMOS ENERGIE FET 6 AMPERE 60 VOLT | Motorola |
| 911863 | MTB36N06V | TMOS ENERGIE FET 32 AMPERE 60 VOLT | Motorola |
| 911864 | MTB36N06V | Energie Mosfet 32 Ampere, 60 Volt | ON Semiconductor |
| 911865 | MTB36N06V | Energie Mosfet 32 Ampere, 60 Volt | ON Semiconductor |
| 911866 | MTB36N06V-D | Energie Mosfet 32 Ampere, 60 Volt N-Führung D2PAK | ON Semiconductor |
| 911867 | MTB36N06VT4 | Energie Mosfet 32 Ampere, 60 Volt | ON Semiconductor |
| 911868 | MTB36N06VT4 | Energie Mosfet 32 Ampere, 60 Volt | ON Semiconductor |
| 911869 | MTB3N100E | TMOS ENERGIE FET 3.0 AMPERE 1000 VOLT | Motorola |
| 911870 | MTB3N100E | 2 A D2PAK SMD Produkte, N-Channel, VDSS 1000 | ON Semiconductor |
| 911871 | MTB3N100E-D | TMOS E-FET hohe Energie-Energie FET D2PAK für Oberflächeneinfassung N-Führung Verbesserung-Modus Silikon-Gatter | ON Semiconductor |
| 911872 | MTB3N120E | TMOS ENERGIE FET 3.0 AMPERE 1200 VOLT | Motorola |
| 911873 | MTB3N120E-D | TMOS E-FET hohe Energie-Energie FET D2PAK für Oberflächeneinfassung N-Führung Verbesserung-Modus Silikon-Gatter | ON Semiconductor |
| 911874 | MTB3N60E | TMOS ENERGIE FET 3.0 AMPERE 600 VOLT | Motorola |
| 911875 | MTB3N60E | D2PAK für Oberflächenmontage N-Kanal Enhancement-Mode-Silizium-Gate | ON Semiconductor |
| 911876 | MTB3N60E-D | TMOS E-FET hohe Energie-Energie FET D2PAK für Oberflächeneinfassung N-Führung Verbesserung-Modus Silikon-Gatter | ON Semiconductor |
| 911877 | MTB40N10E | TMOS ENERGIE FET 40 AMPERE 100 VOLT | Motorola |
| 911878 | MTB40N10E | Energie Mosfet 40 Ampere, 100 Volt | ON Semiconductor |
| 911879 | MTB40N10E-D | Energie Mosfet 40 Ampere, 100 Volt N-Führung D2PAK | ON Semiconductor |
| 911880 | MTB40N10ET4 | Energie Mosfet 40 Ampere, 100 Volt | ON Semiconductor |
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