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Datasheets ha trovato :: 2123 English Version for this page Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versão portuguese para esta página Russian Version Romanian Version
Nr.Nome della parteDescrizioneFabbricatore
151AS29LV800T-70RSC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 70ns tempo di accessoAlliance Semiconductor
152AS29LV800T-70RSI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 70ns tempo di accessoAlliance Semiconductor
153AS29LV800T-70RTC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 70ns tempo di accessoAlliance Semiconductor
154AS29LV800T-70RTI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 70ns tempo di accessoAlliance Semiconductor
155AS29LV800T-80SC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 80ns tempo di accessoAlliance Semiconductor
156AS29LV800T-80SI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 80ns tempo di accessoAlliance Semiconductor
157AS29LV800T-80TC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 80ns tempo di accessoAlliance Semiconductor
158AS29LV800T-80TI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 80ns tempo di accessoAlliance Semiconductor
159AS29LV800T-90SC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 90ns tempo di accessoAlliance Semiconductor
160AS29LV800T-90SI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 90ns tempo di accessoAlliance Semiconductor
161AS29LV800T-90TC3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 90ns tempo di accessoAlliance Semiconductor
162AS29LV800T-90TI3V 1M x 8 / 512K x 16 CMOS Flash EEPROM, 90ns tempo di accessoAlliance Semiconductor
163AS29P2005V 256K x 8/128K x 16 CMOS EEPROM istantaneoAlliance Semiconductor
164AS4C14400-40JC1M-bit â 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 40nsAlliance Semiconductor
165AS4C14400-40TC1M-bit Þ 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 40nsAlliance Semiconductor
166AS4C14400-50JC1M-bit â 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 50nsAlliance Semiconductor
167AS4C14400-50TC1M-bit ÷ 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 50nsAlliance Semiconductor
168AS4C14400-60JCÁ 4 CMOS DRAM Fast Page Mode 1M-bit, unico alimentatore 5V, 60nsAlliance Semiconductor
169AS4C14400-60TC1M-bit  4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 60nsAlliance Semiconductor
170AS4C14400-70JC1M-bit à 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 70nsAlliance Semiconductor
171AS4C14400-70TC1M-bit A 4 CMOS DRAM Fast Page Mode, solo alimentatore 5V, 70nsAlliance Semiconductor
172AS4C14405-40JC1M-bit ÷ 4 CMOS DRAM EDO, solo alimentatore 5V, 40nsAlliance Semiconductor
173AS4C14405-40TC1M-bit À 4 CMOS DRAM EDO, solo alimentatore 5V, 40nsAlliance Semiconductor
174AS4C14405-50JCÞ 1M-bit 4 CMOS DRAM EDO, solo alimentatore 5V, 50nsAlliance Semiconductor
175AS4C14405-50TC1M-bit þ 4 CMOS DRAM EDO, solo alimentatore 5V, 50nsAlliance Semiconductor
176AS4C14405-60JC1M-bit à 4 CMOS DRAM EDO, solo alimentatore 5V, 60nsAlliance Semiconductor
177AS4C14405-60TC1M-bit × 4 CMOS DRAM EDO, solo alimentatore 5V, 60nsAlliance Semiconductor
178AS4C14405-70JC1M-bit A 4 CMOS DRAM EDO, solo alimentatore 5V, 70nsAlliance Semiconductor



179AS4C14405-70TC1M-bit â 4 CMOS DRAM EDO, solo alimentatore 5V, 70nsAlliance Semiconductor
180AS4C1M16E55V 1M x un DRAM di 16 CMOS (EDO)Alliance Semiconductor
181AS4C1M16F55V 1M x un DRAM di 16 CMOS (modo della veloce-pagina)Alliance Semiconductor
182AS4C1M16F5-50JC5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
183AS4C1M16F5-50JI5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
184AS4C1M16F5-50TC5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
185AS4C1M16F5-50TI5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
186AS4C1M16F5-60JC5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
187AS4C1M16F5-60JI5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
188AS4C1M16F5-60TC5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
189AS4C1M16F5-60TI5V 1M X un DRAM Di 16 CmosAlliance Semiconductor
190AS4C256K16E05V 256K x DRAM di CMOS (EDO)Alliance Semiconductor
191AS4C256K16E0-30JC5V 256K x 16 CM0S DRAM (EDO), 30ns tempo di accesso RASAlliance Semiconductor
192AS4C256K16E0-35JC5V 256K x 16 CM0S DRAM (EDO), 35ns tempo di accesso RASAlliance Semiconductor
193AS4C256K16E0-50JC5V 256K x 16 CM0S DRAM (EDO), 50ns tempo di accesso RASAlliance Semiconductor
194AS4C256K16E0-50TC5V 256K x 16 CM0S DRAM (EDO), 50ns tempo di accesso RASAlliance Semiconductor
195AS4C256K16E0-60JCT (rac): 60ns; V (cc): da 4,5 a 5,5 V; 256K ad alta velocità x 16 CMOS DRAM (EDO)Alliance Semiconductor
196AS4C256K16F0-25JC5V 256K x 16 CM0S DRAM (Fast Page Mode), 25ns RAS tempo di accessoAlliance Semiconductor
197AS4C256K16F0-25JI5V 256K x 16 CM0S DRAM (Fast Page Mode), 25ns RAS tempo di accessoAlliance Semiconductor
198AS4C256K16F0-25TC5V 256K x 16 CM0S DRAM (Fast Page Mode), 25ns RAS tempo di accessoAlliance Semiconductor
199AS4C256K16F0-25TI5V 256K x 16 CM0S DRAM (Fast Page Mode), 25ns RAS tempo di accessoAlliance Semiconductor
200AS4C256K16F0-30JC5V 256K x 16 CM0S DRAM (Fast Page Mode), 30ns RAS tempo di accessoAlliance Semiconductor

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