| Nr. | Nome da parte | Descrição | Fabricante |
| 255921 | BD138-6 | TRANSISTOR DO SILICONE DE PNP | Siemens |
| 255922 | BD138-6 | 12.500W comutação PNP plástico com chumbo Transistor. 60V VCEO, 1.500A Ic, 40-100 hFE. BD137-6 Complementar | Continental Device India Limited |
| 255923 | BD13810S | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255924 | BD13810STU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255925 | BD13816S | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255926 | BD13816STU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255927 | BD1386S | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255928 | BD1386STU | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255929 | BD139 | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255930 | BD139 | TRANSISTOR DO SILICONE DE NPN | ST Microelectronics |
| 255931 | BD139 | Mocy de Tranzystor ma.ej cz?otliwo.ci du.ej | Ultra CEMI |
| 255932 | BD139 | TRANSISTOR DO SILICONE DE NPN | SGS Thomson Microelectronics |
| 255933 | BD139 | TRANSISTOR DO SILICONE DE NPN | SGS Thomson Microelectronics |
| 255934 | BD139 | TRANSISTOR DO SILICONE DE NPN | Siemens |
| 255935 | BD139 | Transistor de poder de NPN | Philips |
| 255936 | BD139 | Transistor Médio Plástico Do Silicone NPN Do Poder | Motorola |
| 255937 | BD139 | Finalidade Geral Leaded De Transistor De Poder | Central Semiconductor |
| 255938 | BD139 | Poder 1.5A 80V NPN | ON Semiconductor |
| 255939 | BD139 | 12.500W comutação NPN plástico com chumbo Transistor. 80V VCEO, 1.500A Ic, 40-250 hFE. BD140 Complementar | Continental Device India Limited |
| 255940 | BD139-10 | TRANSISTOR DO SILICONE DE NPN | Siemens |
| 255941 | BD139-10 | Transistor de poder de NPN | Philips |
| 255942 | BD139-10 | TRANSISTOR DO SILICONE DE NPN | ST Microelectronics |
| 255943 | BD139-10 | 12.500W comutação NPN plástico com chumbo Transistor. 80V VCEO, 1.500A Ic, 63-160 hFE. BD140-10 Complementar | Continental Device India Limited |
| 255944 | BD139-16 | Transistor de poder de NPN | Philips |
| 255945 | BD139-16 | TRANSISTOR DO SILICONE DE NPN | ST Microelectronics |
| 255946 | BD139-16 | 12.500W comutação NPN plástico com chumbo Transistor. VCEO 80V, 1.500A Ic, 100-250 hFE. BD140-16 Complementar | Continental Device India Limited |
| 255947 | BD139-25 | 12.500W comutação NPN plástico com chumbo Transistor. 80V VCEO, 1.500A Ic, 160-400 hFE. BD140-25 Complementar | Continental Device India Limited |
| 255948 | BD139-6 | TRANSISTOR DO SILICONE DE NPN | Siemens |
| 255949 | BD139-6 | 12.500W comutação NPN plástico com chumbo Transistor. 80V VCEO, 1.500A Ic, 40-100 hFE. BD140-6 Complementar | Continental Device India Limited |
| 255950 | BD13910S | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255951 | BD13910STU | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255952 | BD13916S | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255953 | BD13916STU | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255954 | BD1396S | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255955 | BD1396STU | Transistor Epitaxial Do Silicone de NPN | Fairchild Semiconductor |
| 255956 | BD140 | Transistor Epitaxial Do Silicone de PNP | Fairchild Semiconductor |
| 255957 | BD140 | TRANSISTOR DO SILICONE DE PNP | ST Microelectronics |
| 255958 | BD140 | Mocy de Tranzystor ma.ej cz?otliwo.ci du.ej | Ultra CEMI |
| 255959 | BD140 | TRANSISTOR DO SILICONE DE PNP | SGS Thomson Microelectronics |
| 255960 | BD140 | TRANSISTOR DO SILICONE DE PNP | SGS Thomson Microelectronics |
| | | |
