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Datenblaetter Gefunden :: 1351360Seite: << | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | 6249 | 6250 | 6251 | 6252 | >>
Nr.TeilnameBeschreibungHersteller
249841BC308BUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249842BC308CVerstärker Transistors(PNP)Motorola
249843BC308CPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249844BC308CVerstärker Transistors(PNP Silikon)ON Semiconductor
249845BC308CBUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249846BC308TAPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249847BC308TARPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249848BC309Schaltung und Verstärker-AnwendungenFairchild Semiconductor
249849BC309Universeller TransistorKorea Electronics (KEC)
249850BC309Tranzystor ma.ej cz?otliwo.ci ma.ej mocyUltra CEMI
249851BC309PNP SILIKON-PLANARE EPITAXIAL- TRANSISTORENMicro Electronics
249852BC309Transistor. Schalt- und Verstärkeranwendungen. Kollektor-Basisspannung VCBO = -30V. Kollektor-Emitter-Spannung Vceo = -25 V. Emitter-Basis-Spannung Vebo = -5V. Kollektor-Verlust Pc (max) = 500mW. Kollektorstrom Ic = -100mA.USHA India LTD
249853BC309APNP EPITAXIAL- SILIKON-TRANSISTORFairchild Semiconductor
249854BC309APNP EPITAXIAL- SILIKON-TRANSISTORFairchild Semiconductor
249855BC309A0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120-220 hFEContinental Device India Limited
249856BC309ABUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249857BC309ATAPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249858BC309BVerstärker Transistors(PNP)Motorola
249859BC309B0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200-460 hFEContinental Device India Limited



249860BC309BBUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249861BC309BTAPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249862BC309CPNP EPITAXIAL- SILIKON-TRANSISTORFairchild Semiconductor
249863BC309CPNP EPITAXIAL- SILIKON-TRANSISTORFairchild Semiconductor
249864BC309C0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 420-800 hFEContinental Device India Limited
249865BC309CBUPNP Epitaxial- Silikon-TransistorFairchild Semiconductor
249866BC313Tranzystor krzemowy redniej mocy, ma.ej cz?otliwo.ciUltra CEMI
249867BC313Tranzystor ma.ej cz?otliwo.ci ma.ej mocyUltra CEMI
249868BC317NPN SILIKON-PLANARER EPITAXIAL- TRANSISTORMicro Electronics
249869BC3170.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110-450 hFEContinental Device India Limited
249870BC317A0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110-220 hFEContinental Device India Limited
249871BC317B0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 200-450 hFEContinental Device India Limited
249872BC318NPN SILIKON-PLANARER EPITAXIAL- TRANSISTORMicro Electronics
249873BC319NPN SILIKON-PLANARER EPITAXIAL- TRANSISTORMicro Electronics
249874BC320PNP SILIKON-PLANARE EPITAXIAL- TRANSISTORENMicro Electronics
249875BC3200Silikon-Brücke GleichrichterDiotec Elektronische
249876BC321PNP SILIKON-PLANARE EPITAXIAL- TRANSISTORENMicro Electronics
249877BC322PNP SILIKON-PLANARE EPITAXIAL- TRANSISTORENMicro Electronics
249878BC327PNP ZwecktransistorPhilips
249879BC327Schaltung und Verstärker-AnwendungenFairchild Semiconductor
249880BC327Universeller TransistorKorea Electronics (KEC)
Datenblaetter Gefunden :: 1351360Seite: << | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | 6249 | 6250 | 6251 | 6252 | >>
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