Nr. | Teilname | Beschreibung | Hersteller |
249841 | BC308BU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249842 | BC308C | Verstärker Transistors(PNP) | Motorola |
249843 | BC308C | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249844 | BC308C | Verstärker Transistors(PNP Silikon) | ON Semiconductor |
249845 | BC308CBU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249846 | BC308TA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249847 | BC308TAR | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249848 | BC309 | Schaltung und Verstärker-Anwendungen | Fairchild Semiconductor |
249849 | BC309 | Universeller Transistor | Korea Electronics (KEC) |
249850 | BC309 | Tranzystor ma.ej cz?otliwo.ci ma.ej mocy | Ultra CEMI |
249851 | BC309 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
249852 | BC309 | Transistor. Schalt- und Verstärkeranwendungen. Kollektor-Basisspannung VCBO = -30V. Kollektor-Emitter-Spannung Vceo = -25 V. Emitter-Basis-Spannung Vebo = -5V. Kollektor-Verlust Pc (max) = 500mW. Kollektorstrom Ic = -100mA. | USHA India LTD |
249853 | BC309A | PNP EPITAXIAL- SILIKON-TRANSISTOR | Fairchild Semiconductor |
249854 | BC309A | PNP EPITAXIAL- SILIKON-TRANSISTOR | Fairchild Semiconductor |
249855 | BC309A | 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120-220 hFE | Continental Device India Limited |
249856 | BC309ABU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249857 | BC309ATA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249858 | BC309B | Verstärker Transistors(PNP) | Motorola |
249859 | BC309B | 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200-460 hFE | Continental Device India Limited |
249860 | BC309BBU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249861 | BC309BTA | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249862 | BC309C | PNP EPITAXIAL- SILIKON-TRANSISTOR | Fairchild Semiconductor |
249863 | BC309C | PNP EPITAXIAL- SILIKON-TRANSISTOR | Fairchild Semiconductor |
249864 | BC309C | 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 420-800 hFE | Continental Device India Limited |
249865 | BC309CBU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
249866 | BC313 | Tranzystor krzemowy redniej mocy, ma.ej cz?otliwo.ci | Ultra CEMI |
249867 | BC313 | Tranzystor ma.ej cz?otliwo.ci ma.ej mocy | Ultra CEMI |
249868 | BC317 | NPN SILIKON-PLANARER EPITAXIAL- TRANSISTOR | Micro Electronics |
249869 | BC317 | 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110-450 hFE | Continental Device India Limited |
249870 | BC317A | 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110-220 hFE | Continental Device India Limited |
249871 | BC317B | 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 200-450 hFE | Continental Device India Limited |
249872 | BC318 | NPN SILIKON-PLANARER EPITAXIAL- TRANSISTOR | Micro Electronics |
249873 | BC319 | NPN SILIKON-PLANARER EPITAXIAL- TRANSISTOR | Micro Electronics |
249874 | BC320 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
249875 | BC3200 | Silikon-Brücke Gleichrichter | Diotec Elektronische |
249876 | BC321 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
249877 | BC322 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
249878 | BC327 | PNP Zwecktransistor | Philips |
249879 | BC327 | Schaltung und Verstärker-Anwendungen | Fairchild Semiconductor |
249880 | BC327 | Universeller Transistor | Korea Electronics (KEC) |
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