| Nr. | Teilname | Beschreibung | Hersteller |
| 250241 | BC448 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250242 | BC448A | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250243 | BC448A | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250244 | BC448B | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250245 | BC448B | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250246 | BC449 | Hochspannungstransistoren | ON Semiconductor |
| 250247 | BC449 | V (CEO): 100V; V (CBO): 100V; V (ebo): 5V; Spannung NPN Silizium-Transistor | Motorola |
| 250248 | BC449A | Hochspannungstransistoren | ON Semiconductor |
| 250249 | BC449A | V (CEO): 100V; V (CBO): 100V; V (ebo): 5V; Spannung NPN Silizium-Transistor | Motorola |
| 250250 | BC449B | V (CEO): 100V; V (CBO): 100V; V (ebo): 5V; Spannung NPN Silizium-Transistor | Motorola |
| 250251 | BC450 | PNP SILIKON-TRANSISTOR | Micro Electronics |
| 250252 | BC450 | Hochspannungstransistoren | Motorola |
| 250253 | BC450 | 0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 50-220 hFE | Continental Device India Limited |
| 250254 | BC450A | Hochspannungstransistoren | Motorola |
| 250255 | BC450A | 0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 120-220 hFE | Continental Device India Limited |
| 250256 | BC450B | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250257 | BC450B | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Continental Device India Limited |
| 250258 | BC460 | SILIKONAF MITTLERE ENDVERSTÄRKER UND SCHALTER | Micro Electronics |
| 250259 | BC460 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 250260 | BC460 | 10.000W General Purpose PNP Metall kann Transistor. 40V Vceo, A Ic, 40-250 hFE. | Continental Device India Limited |
| 250261 | BC461 | SILIKONAF MITTLERE ENDVERSTÄRKER UND SCHALTER | Micro Electronics |
| 250262 | BC461 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 250263 | BC461 | 10.000W General Purpose PNP Metall kann Transistor. 60V Vceo, A Ic, 40-250 hFE. | Continental Device India Limited |
| 250264 | BC477 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 250265 | BC477 | NIEDRIGE GERÄUSCH-UNIVERSELLE AUDIOVERSTÄRKER | ST Microelectronics |
| 250266 | BC477 | 1.200 W General Purpose PNP Metall kann der Transistor. 80V Vceo, 0.100A Ic, 30 hFE. | Continental Device India Limited |
| 250267 | BC477 | ft min 100 MHz hfe Min 50 Transistorpolung PNP Aktuelle Ic dauernd max 0,15 A Spannung VCBO 90 V Spannungs Vceo 80 V Strom Ic (HFE) 2 mA Leistung Ptot 360 mW | SGS Thomson Microelectronics |
| 250268 | BC478 | NIEDRIGE GERÄUSCH-UNIVERSELLE AUDIOVERSTÄRKER | ST Microelectronics |
| 250269 | BC478 | LOW NOISE ALLGEMEINE Audio-Verstärker | SGS Thomson Microelectronics |
| 250270 | BC478B | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto18. | SemeLAB |
| 250271 | BC478B | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto18. | SemeLAB |
| 250272 | BC479 | NIEDRIGE GERÄUSCH-UNIVERSELLE AUDIOVERSTÄRKER | ST Microelectronics |
| 250273 | BC479 | LOW NOISE ALLGEMEINE Audio-Verstärker | SGS Thomson Microelectronics |
| 250274 | BC485 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
| 250275 | BC486 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
| 250276 | BC487 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
| 250277 | BC487 | High-Current-Transistoren | ON Semiconductor |
| 250278 | BC488 | PNP SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
| 250279 | BC488B | High-Current-Transistoren | ON Semiconductor |
| 250280 | BC489 | NPN SILIKON-PLANARE EPITAXIAL- TRANSISTOREN | Micro Electronics |
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