Nr. | Teilname | Beschreibung | Hersteller |
256601 | BD438STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256602 | BD439 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256603 | BD439 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
256604 | BD439 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256605 | BD439 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256606 | BD439 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256607 | BD439 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
256608 | BD439 | 36.000W Schalt NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 hFE. | Continental Device India Limited |
256609 | BD439 | Plastic mittlerer Leistung Silizium NPN-Transistor. 4 A, 60 V. | Motorola |
256610 | BD439 | 60 V, 4 A, NPN Silizium-Transistor Epibase | Siemens |
256611 | BD439S | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256612 | BD440 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256613 | BD440 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
256614 | BD440 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256615 | BD440 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256616 | BD440 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
256617 | BD440 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
256618 | BD440 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256619 | BD440 | Energie 4A 60V PNP | ON Semiconductor |
256620 | BD440 | 36.000W Schalt PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 hFE. | Continental Device India Limited |
256621 | BD440S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256622 | BD441 | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256623 | BD441 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
256624 | BD441 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256625 | BD441 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256626 | BD441 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
256627 | BD441 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | Motorola |
256628 | BD441 | Mittlerer Plastiktransistor Des Energie Silikon-NPN | ON Semiconductor |
256629 | BD441 | 36.000W Schalt NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 15 hFE. | Continental Device India Limited |
256630 | BD441STU | NPN Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256631 | BD442 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
256632 | BD442 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
256633 | BD442 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256634 | BD442 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
256635 | BD442 | TRANSISTOREN DES PNP SILIKON-EPIBASE | Siemens |
256636 | BD442 | Mittlerer Plastiktransistor Des Energie Silikon-PNP | Motorola |
256637 | BD442 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
256638 | BD442 | Energie 4A 80V PNP | ON Semiconductor |
256639 | BD442 | 36.000W Schalt PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 15 hFE. | Continental Device India Limited |
256640 | BD442S | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
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