| Nr. | Teilname | Beschreibung | Hersteller |
| 48841 | 2N6469 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48842 | 2N6469 | Epitaxial-Basis, Silizium PNP Hochleistungstransistor. -50 V, 125W. | General Electric Solid State |
| 48843 | 2N6470 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48844 | 2N6471 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48845 | 2N6472 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48846 | 2N6473 | ERGÄNZENDE SILIKON-SCHALTUNG TRANSITORS | Central Semiconductor |
| 48847 | 2N6473 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48848 | 2N6473 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 110V. | General Electric Solid State |
| 48849 | 2N6474 | ERGÄNZENDE SILIKON-SCHALTUNG TRANSITORS | Central Semiconductor |
| 48850 | 2N6474 | 130 V, epitaktischen Basis NPN selicon versawatt Transistor | Boca Semiconductor Corporation |
| 48851 | 2N6474 | Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 130V. | General Electric Solid State |
| 48852 | 2N6475 | ERGÄNZENDE SILIKON-SCHALTUNG TRANSITORS | Central Semiconductor |
| 48853 | 2N6475 | EPITAXIAL-BASE, SILIKON N-P-N UND P-N-P VERSAWATT TRANSISTOREN | Boca Semiconductor Corporation |
| 48854 | 2N6475 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -110V. | General Electric Solid State |
| 48855 | 2N6476 | ERGÄNZENDE SILIKON-SCHALTUNG TRANSITORS | Central Semiconductor |
| 48856 | 2N6476 | Epitaxial-Unterseite, Silikon N-P-N und P-N-P VERSAWATT Transistoren | Boca Semiconductor Corporation |
| 48857 | 2N6476 | Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -130V. | General Electric Solid State |
| 48858 | 2N6477 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
| 48859 | 2N6477 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
| 48860 | 2N6478 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
| 48861 | 2N6478 | MITTLERE TRANSISTOREN DES ENERGIE SILIKON-NPN | General Electric Solid State |
| 48862 | 2N6486 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48863 | 2N6486 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48864 | 2N6486 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48865 | 2N6486 | 75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48866 | 2N6486 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 50V. | General Electric Solid State |
| 48867 | 2N6487 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 48868 | 2N6487 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48869 | 2N6487 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48870 | 2N6487 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
| 48871 | 2N6487 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48872 | 2N6487 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48873 | 2N6487 | Energie 15A 80V Getrenntes NPN | ON Semiconductor |
| 48874 | 2N6487 | 75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
| 48875 | 2N6487 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 70V. | General Electric Solid State |
| 48876 | 2N6487-D | Ergänzendes Silikon-Plastikenergie Transistoren 2N6487 | ON Semiconductor |
| 48877 | 2N6488 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 48878 | 2N6488 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48879 | 2N6488 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 48880 | 2N6488 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
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