Nr. | Teilname | Beschreibung | Hersteller |
48881 | 2N6488 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48882 | 2N6488 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48883 | 2N6488 | Energie 15A 80V Getrenntes NPN | ON Semiconductor |
48884 | 2N6488 | 75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
48885 | 2N6488 | 15A, 75W, Silizium NPN Epitaxial-Basis VERSAWATT Transistor. 90V. | General Electric Solid State |
48886 | 2N6489 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
48887 | 2N6489 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48888 | 2N6489 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48889 | 2N6489 | 75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
48890 | 2N6489 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -50 V. | General Electric Solid State |
48891 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
48892 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
48893 | 2N6490 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
48894 | 2N6490 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
48895 | 2N6490 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48896 | 2N6490 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48897 | 2N6490 | Energie 15A 80V Getrenntes NPN | ON Semiconductor |
48898 | 2N6490 | 75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
48899 | 2N6490 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -70V. | General Electric Solid State |
48900 | 2N6491 | ENERGIE TRANSISTORS(15A, 75w) | MOSPEC Semiconductor |
48901 | 2N6491 | NPN/PNP PLASTIKENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48902 | 2N6491 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48903 | 2N6491 | Energie 15A 80V Getrenntes PNP | ON Semiconductor |
48904 | 2N6491 | 75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20-150 hFE. | Continental Device India Limited |
48905 | 2N6491 | 15A, 75W, Silizium PNP epitaktischen Basis VERSAWATT Transistor. -90V. | General Electric Solid State |
48906 | 2N6494 | PNP SILIKON-ENERGIE TRANSISTOR | Boca Semiconductor Corporation |
48907 | 2N6496 | Hohe Strom, hohe Leistung, hohe Geschwindigkeit Silizium NPN Planartransistor. | General Electric Solid State |
48908 | 2N6497 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
48909 | 2N6497 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48910 | 2N6497 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48911 | 2N6497 | Energie 5A 250V Getrenntes NPN | ON Semiconductor |
48912 | 2N6497-D | Hochspannungs-NPN Silikon-Energie Transistoren | ON Semiconductor |
48913 | 2N6498 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
48914 | 2N6498 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48915 | 2N6498 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48916 | 2N6498 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
48917 | 2N6499 | ENERGIE TRANSISTORS(5A, 80w) | MOSPEC Semiconductor |
48918 | 2N6499 | HOCHSPANNUNGSNPN SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
48919 | 2N6499 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
48920 | 2N6500 | EPITAXIAL- PLANARE SCHNELLTRANSISTOREN DES KOLLEKTOR-SILIKON-NPN | General Electric Solid State |
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